| PART |
Description |
Maker |
| JHS-139 JHS-139PIN JH-139 JH-139PIN JH-JHS-139 |
Quadrature Hybrid, 250 - 500 MHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4
High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| STW29NK50Z |
31 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 500 V - 0.105 Ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| AD800904 AD8009ACHIPS AD8009JRT-R2 AD8009JRT-REEL |
1 GHz, 5,500 V/?Low Distortion Amplifier
1 GHz, 5,500 V/µs Low Distortion Amplifier
1 GHz, 5,500 V/Я Low Distortion Amplifier
1 GHz, 5,500 V/ Low Distortion Amplifier
1 GHz, 5,500 V/?/a> Low Distortion Amplifier
1 GHz, 5,500 V/µs Low Distortion Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Commercial 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
1 GHz, 5,500 V/µs Low Distortion Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
|
Analog Devices, Inc.
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
|
